SrRuO3 thin films grown on MgO substrates at different oxygen partial pressures

被引：7
|
作者：
Zou, Bin [1 ]
Petrov, Peter K. [1 ]
Alford, Neil McN [1 ]
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England
来源：
JOURNAL OF MATERIALS RESEARCH | 2013年 / 28卷 / 05期
基金：
英国工程与自然科学研究理事会;
关键词：
PULSED-LASER DEPOSITION; ELECTRICAL-PROPERTIES; DOMAIN-STRUCTURE; MICROSTRUCTURE;
D O I：
10.1557/jmr.2012.409
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A comprehensive study of SrRuO3 thin films growth on (001) MgO substrates by pulsed laser deposition in a wide oxygen pressure range from 10 to 300 mTorr was carried out. The experimental results showed a correlation between the lattice constants, resistivity, and oxygen partial pressures used. Ru deficiency detected only in films deposited at lower oxygen pressures (<50 mTorr), resulted in an elongation of the in-plane and out-of-plane lattice constants and an increase in the film resistivity. When deposited with oxygen partial pressure of 50 mTorr, SrRuO3 films had lattice parameters matching those of bulk SrRuO3 material and exhibited room temperature resistivity of 320 mu Omega.cm. The resistivity of SrRuO3/MgO films decreased with increasing oxygen partial pressure.
引用
收藏
页码：702 / 707
页数：6
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