A 1.2-V 1.76-ppm/°C Low Voltage CMOS Band-gap Reference

被引：0
|
作者：
Ma, Bill [1 ]
Yu, Fengqi [1 ]
机构：
[1] Chinese Acad Sci, Shenzhen Inst Adv Technol, Dept Integrated Elect, Shenzhen, Peoples R China
来源：
SENSORS, MEASUREMENT AND INTELLIGENT MATERIALS, PTS 1-4 | 2013年 / 303-306卷
关键词：
Band-gap reference; low voltage; low power; CMOS; weak inversion region; subthreshold; curvature compensation;
D O I：
10.4028/www.scientific.net/AMM.303-306.1798
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper proposes an innovative CMOS band-gap reference (BGR) topology with a curvature-compensation by using MOS transistors operating in weak inversion region. The mechanism is analyzed thoroughly and the corresponding BGR circuit has been implemented in standard CMOS 0.18u technology. The proposed BGR achieves 1.76 ppm/degrees C in the range of -40 degrees C to 120 degrees C at 1.2V supply voltage. In addition, it consumes only 30uA current.
引用
收藏
页码：1798 / 1802
页数：5
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