The effects of heteroatom-doping in Stone-Wales defects on the electronic properties of graphene nanoribbons

被引:1
|
作者
Wang, Zhiyong [1 ]
机构
[1] Guilin Univ Technol, Coll Sci, Guilin 541008, Peoples R China
来源
关键词
Stone-Wales Defect; Doping; Electronic property;
D O I
10.4028/www.scientific.net/AMR.463-464.793
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of boron(nitrogen/silicon)-dopant in Stone-Wales defects on electronic properties of graphene nanoribbons are investigated by using density functional theory. It is shown that the geometry structures and band structures have changed distinctly for these complex configurations. Interestingly for the dopant site 1, the distortions of boron/silicon-doping configurations are larger than that of the nitrogen-doping configurations, which affects the band structures of these configurations. The theoretical results may be valuable for the design of electronic devices.
引用
收藏
页码:793 / 797
页数:5
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