Steep Increase in Substrate Current in Metal-Oxide-Semiconductor Field-Effect Transistor with Multiple-Gate Configuration

被引：1
|
作者：
Abe, Kazuhide [1 ]
机构：
[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Electron Devices Lab, Kawasaki, Kanagawa 2128582, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 11期
关键词：
IMPACT IONIZATION; OPTICAL PHONONS; CURRENT MODEL; SILICON; AMPLIFICATION; RELIABILITY; DEGRADATION; FORMULATION; DECAY; SI;
D O I：
10.7567/JJAP.52.110202
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A steep increase in substrate current has been observed in a metal-oxide-semiconductor field-effect transistor with a multiple-gate configuration. Regarding gate voltage dependence, the substrate current plotted on a logarithmic scale exhibited a sharp rise with a slope of 6 mV/decade, which is 20 times steeper than that simultaneously measured for the drain current. Since the slope is even 10 times steeper than the ideal subthreshold swing of 60 mV/decade, the upsurge has been discussed using a hypothetical model in which the impact ionization rate is increased by excitation of acoustic standing waves within the device. (C) 2013 The Japan Society of Applied Physics
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