105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers

被引：22

作者：

Le Royer, C. ^{[1
]}

Clavelier, L. ^{[1
]}

Tabone, C. ^{[1
]}

Romanjek, K. ^{[1
]}

Deguet, C. ^{[1
]}

Sanchez, L. ^{[1
]}

Hartmann, J. -M. ^{[1
]}

Roure, M. -C. ^{[1
]}

Grampeix, H. ^{[1
]}

Soliveres, S. ^{[1
]}

Le Carval, G. ^{[1
]}

Truche, R. ^{[1
]}

Pouydebasque, A. ^{[1
]}

Vinet, M. ^{[1
]}

Deleonibus, S. ^{[1
]}

机构：

[1] CEA, LETI Minatec, F-38054 Grenoble 9, France

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 09期

关键词：

germanium; germanium-on-insulator; GeOI; MOSFET; high-K;

D O I：

10.1016/j.sse.2008.04.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication and electrical characterization of deep sub-micron (gate length down to 105 nm) GeOI pMOSFETs. The Ge layer obtained by hetero-epitaxy on Si wafers has been transferred using the Smart Cut (TM) process to fabricate 200 mm GeOI wafers with Ge thickness down to 60-80 nm. A full Si MOS compatible pMOSFET process was implemented with HfO2/TiN gate stack The electrical. characterization of the fabricated devices and the systematic analysis of the measured performances (I-ON, I-OFF, transconductance, low field mobility, S, DIBL) demonstrate the potential of pMOSFET oil GeOI for advanced technological nodes. The dependence of these parameters have been analyzed with respect to the gate length, showing very good transport properties (mu(h) similar to 250 cm(2)/V/s, I-ON = 436 mu A/mu m for L-C = 105 nm), and OFF Current densities comparable or better than those reported in the literature. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1285 / 1290

页数：6

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