Effects of hydrogenation on electrical properties of B-doped homoepitaxial diamond

被引：0
|
作者：
Masai, S
Yamanaka, S
Watanabe, H
Kawata, S
Takeuchi, D
Okushi, H
Kurosu, T
Kajimura, K
机构：
[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
[2] Tokai Univ, Sch Engn, Dept Elect, Kanagawa 2591292, Japan
[3] Univ Tsukuba, Fac Mat Sci, Tsukuba, Ibaraki 3058573, Japan
来源：
NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY | 1999年 / 9卷 / 02期
关键词：
high-conductivity layer; hydrogenated diamond film; B-doped diamond film; Hall-effect measurement;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：115 / 117
页数：3
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