Resistivity in two-dimensional doped antiferromagnet

被引：4
|
作者：
Belemuk, AM [1 ]
Barabanov, AF [1 ]
机构：
[1] Inst High Pressure Phys, Troitsk 142190, Moscow Region, Russia
来源：
PHYSICS LETTERS A | 2004年 / 323卷 / 1-2期
关键词：
D O I：
10.1016/j.physleta.2003.12.064
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The temperature dependence of the resistivity rho(T) in two-dimensional doped antiferromagnet is investigated within the single band Kondo lattice model. To take into account the strong temperature dependent scattering anisotropy the kinetic equation for the nonequilibrium carrier distribution function is derived through the density matrix formalism in two-moment approach. Obtained rho(T) dependence demonstrates qualitative agreement with experimental data for optimally doped high temperature superconductors in a broad temperature range. It is found that a gap in the spin excitation spectrum is of crucial importance for the behavior of rho(T). (C) 2004 Published by Elsevier B.V.
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收藏
页码：138 / 147
页数：10
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