Underpotential deposition of selenium and antimony on gold

被引:11
|
作者
Chen, Yuan [1 ,2 ,3 ]
Wang, Lishi [1 ,2 ]
Pradel, Annie [3 ]
Merlen, Alexandre [2 ,4 ]
Ribes, Michel [3 ]
Record, Marie-Christine [1 ,2 ]
机构
[1] Aix Marseille Univ, IM2NP, F-13397 Marseille 20, France
[2] CNRS, UMR 7334, IM2NP, F-13397 Marseille 20, France
[3] Univ Montpellier 2, Inst Charles Gerhardt Montpellier, UMR CNRS 5253, ChV,CC1503, F-34095 Montpellier 5, France
[4] Univ Toulon & Var, IM2NP, F-83957 La Garde, France
关键词
Electrochemistry; Underpotential deposition; EC-ALE; Sb2Se3; Thin films; ATOMIC LAYER EPITAXY; SB2SE3; THIN-FILMS; WIRE-LIKE SB2SE3; BISMUTH TELLURIDE; NONAQUEOUS MEDIA; ECALE; ELECTRODEPOSITION; GROWTH; SUBSTRATE; ROUTE;
D O I
10.1007/s10008-015-2881-0
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The present paper is a detailed study on the deposition of Sb2Se3 thin films by electrochemical atomic layer epitaxy (EC-ALE). The related electrochemical aspects have been deeply investigated by means of cyclic voltammetry, anodic potentiodynamic scanning, and coulometry. The UPD layer of Se was obtained by first depositing both UPD Se and a small amount of bulk Se and then stripping the redundant bulk Se in blank solutions. A "two times rinsing" method was developed to avoid the formation of red Se during the rinsing process. The deposition parameters were determined for the first three EC-ALE cycles, and from these values, a nanofilm containing Sb and Se atoms has been obtained. By scanning electron microscopy and coulometry, it was shown that the deposit is compact and it has a stoichiometry very close to that of Sb2Se3. The Raman spectral analyses show that the deposit is made of Sb2Se3 nanoclusters.
引用
收藏
页码:2399 / 2411
页数:13
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