Novel Inter Layer Dielectric and Thermal TSV material for enhanced heat mitigation in 3-D IC

被引：0

作者：

Khurram, Kumail ^{[1
]}

Panigrahi, Asisa Kumar ^{[1
]}

Bonam, Satish ^{[1
]}

Singh, Om Krishan ^{[2
]}

Singh, Shiv Govind ^{[1
]}

机构：

[1] Indian Inst Technol Hyderabad, Dept Elect Engn, Kandi 502285, Telangana, India

[2] Govt India, Dept Elect & Informat Technol DeitY, New Delhi, India

来源：

2016 IEEE INTERNATIONAL 3D SYSTEMS INTEGRATION CONFERENCE (3DIC) | 2016年

关键词：

ILD; Thermal TSV; h-BN; liner shell; heat mitigation; 3D-IC;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, heat transfer in 3D IC system is investigated using practical and novel materials for Inter Layer Dielectric (ILD) and Thermal Through Silicon Vias (TTSO. The currently used SiO2 ILD is amiss for heat mitigation due to its poor thermal conductivity. The unique thermal and electrical properties of Hexagonal Boron Nitride (h-BN) are explored in this work for improved heat mitigation.

引用

页数：4

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