Towards Polyoxometalate-Cluster-Based Nano-Electronics

被引：67
|
作者：
Vila-Nadal, Laia [1 ]
Mitchell, Scott G. [1 ]
Markov, Stanislav [2 ]
Busche, Christoph [1 ]
Georgiev, Vihar [2 ]
Asenov, Asen [2 ]
Cronin, Leroy [1 ]
机构：
[1] Univ Glasgow, Sch Chem, WestCHEM, Glasgow G12 8QQ, Lanark, Scotland
[2] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland
来源：
CHEMISTRY-A EUROPEAN JOURNAL | 2013年 / 19卷 / 49期
基金：
英国工程与自然科学研究理事会;
关键词：
nanoelectronics; nanosystems; polyoxometalates; redox-active systems; INDIVIDUALLY DISTINGUISHABLE LABELS; ENVIRONMENTALLY BENIGN TECHNOLOGY; HETEROPOLYTUNGSTATE ANIONS; DAWSON STRUCTURE; FLASH MEMORY; OXIDE; COMPLEXES; OXIDATION; REDUCTION; 18-MOLYBDOPYROPHOSPHATE;
D O I：
10.1002/chem.201301631
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We explore the concept that the incorporation of polyoxometalates (POMs) into complementary metal oxide semiconductor (CMOS) technologies could offer a fundamentally better way to design and engineer new types of data storage devices, due to the enhanced electronic complementarity with SiO2, high redox potentials, and multiple redox states accessible to polyoxometalate clusters. To explore this we constructed a custom-built simulation domain bridge. Connecting DFT, for the quantum mechanical modelling part, and mesoscopic device modelling, confirms the theoretical basis for the proposed advantages of POMs in non-volatile molecular memories (NVMM) or flash-RAM.
引用
收藏
页码：16502 / 16511
页数：10
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