Efficiency improvement of light-emitting diodes with a developed electron blocking layer structure and its optimization

被引：10
|
作者：
Wang, Tian-Hu [1 ,2 ]
Xu, Jin-Liang [1 ,2 ]
Wang, Xiao-Dong [1 ,3 ]
机构：
[1] N China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
[2] N China Elect Power Univ, Being Key Lab New & Renewable Energy, Beijing 102206, Peoples R China
[3] N China Elect Power Univ, Beijing Key Lab Multiphase Flow Arid Heat Transfe, Beijing 102206, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2013年 / 47卷
基金：
中国国家自然科学基金;
关键词：
MULTIQUANTUM BARRIER; SEMICONDUCTORS; SUPERLATTICES; PERFORMANCE;
D O I：
10.1016/j.physe.2012.09.024
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We study the internal quantum efficiency (IQE) of light-emitting diodes (LEDs) with an added AlxGa1-xN/GaN multi-quantum-barrier as the electron blocking layer (EBL) and optimize the structure parameter. Comparison was performed under same running conditions for LEDs with a single-barrier EBL (conventional design) and multi-quantum-barrier EBL. The numerical simulation shows that the IQE is significantly increased to 63.7% for the optimized structure parameters due to the modified energy band diagrams which are responsible for the enhanced carrier concentration in the active region. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：51 / 58
页数：8
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