Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

被引:8
|
作者
Thakre, Atul [1 ,2 ]
Kumar, Ashok [1 ,2 ]
机构
[1] CSIR Natl Phys Lab, Dr KS Krishnan Marg, New Delhi 110012, India
[2] AcSIR, CSIR Natl Phys Lab CSIR NPL Campus, New Delhi 110012, India
来源
AIP ADVANCES | 2017年 / 7卷 / 12期
关键词
MEMORIES; MECHANISMS;
D O I
10.1063/1.5004232
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An enhanced, repeatable and robust resistive switching phenomenon was observed in Cr substituted BaTiO3 polar ferroelectric thin films; fabricated and deposited by the sol-gel approach and spin coating technique, respectively. An enhanced bistable bipolar resistive switching (BRS) phenomenon without electro-forming process, low switching voltage (similar to 2 V) and moderate retention characteristics of 10(4) s along with a high R-off/R-on resistance ratio similar to 10(3) was achieved. The current conduction analysis showed that the space charge limited conduction (SCLC) and Schottky emission conduction dominate in the high voltage range, while thermally active charge carriers (ohmic) in the lower voltage range. The impedance spectroscopy study indicates the formation of current conducting path and rupturing of oxygen vacancies during SET and RESET process. (c) 2017 Author(s).
引用
收藏
页数:8
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