Efficient field emission from ZnO by morphological and electronic design

被引：1
|
作者：
Sun, Xiaowei W. [1 ]
Xu, Chunxiang [1 ]
Wei, Ang [1 ]
Li, Chen [2 ]
Lei, Wei [2 ]
Zhang, Xiaobing [2 ]
Wang, Baoping [2 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Nanyang Ave, Singapore 639798, Singapore
[2] Southeast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China
来源：
2007 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXVIII, BOOKS I AND II | 2007年 / 38卷
关键词：
D O I：
10.1889/1.2785579
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Efficient field emission from nanostructural ZnO can be engineered by morphological and electronic design. By fabricating ZnO into pin structure with sharp tip, low threshold and high emission current density were obtained. By doping ZnO, the Fermi level was lifted up to increase the conductivity and reduce the emission barrier. We explored both dry and wet method for ZnO field emitter fabrication. ZnO field emitters are oxidation resistant, which allows a less stringent processing process (annealing in oxygen ambient) and low vacuum operation.
引用
收藏
页码：1413 / +
页数：2
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