Nonlinear Charge Trapping Effects on Pulsed I/V Characteristics of GaN FETs

被引：0
|
作者：
Santarelli, Alberto [1 ]
Cignani, Rafael [1 ]
Gibiino, Gian Piero [1 ,2 ]
Niessen, Daniel [1 ]
Traverso, Pier Andrea [1 ]
Florian, Corrado [1 ]
Lanzieri, Claudio [3 ]
Nanni, Antonio [3 ]
Schreurs, Dominique [2 ]
Filicori, Fabio [1 ]
机构：
[1] Univ Bologna, DEI Guglielmo Marconi, Viale Risorgimento 2, I-40136 Bologna, Italy
[2] Katholieke Univ Leuven, Div ESAT Telemic, I-00131 Rome, Italy
[3] Selex ES, I-00131 Rome, Italy
来源：
2013 EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2013年
关键词：
GaN FETs; Pulsed Characterization; Electro-Thermal Empirical Modelling;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nonlinear dynamic characterization of 1-mm GaN FETs is carried out by means of pulsed waveform excitations, applied through a recently proposed measurement setup. Due to fast trap capture phenomena, standard narrow- pulsed I/V characteristics are found to deviate from the ideal behavior. In this paper, the effects of the nonlinear charge trapping on pulsed I/V characteristics are experimentally observed thanks to a particular feature of the adopted measurement setup, which allows the monitoring of the DC drain current components of the pulses. In addition, the progressive degradation of the device performance due to charge trapping phenomena at increasing excitation amplitudes is shown by means of a new pulsing procedure.
引用
收藏
页码：1375 / 1378
页数：4
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