Current Leakage Evolution in Partially Gate Ruptured Power MOSFETs

被引：10

作者：

Scheick, Leif ^{[1
]}

Edmonds, Larry ^{[1
]}

Selva, Luis ^{[1
]}

Chen, Yuan ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 04期

关键词：

Avalanche breakdown; power MOSFET; SEGR; thermal runaway;

D O I：

10.1109/TNS.2008.2001008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It has been observed that power MOSFETs can experience an SEGR and continue to function with altered parameters. We propose that there are three different types of SEGR modes; the micro-break, the thermal runaway, and the avalanche breakdown. Data that demonstrates these stages of device failure are presented as well as a proposed model for the micro-break. Brief discussions of the other modes, based on analysis combined with our interpretations of the older literature, are also given.

引用

页码：2366 / 2375

页数：10

共 50 条

[1] Current leakage evolution in partially gate-ruptured power MOSFETs
Scheick, Leif
Selva, Luis
Chen, Yuan
Edmonds, Larry
[J]. 2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, : 645 - 646
[2] Monitoring of Gate Leakage Current on SiC Power MOSFETs: An Estimation Method for Smart Gate Drivers
Weckbrodt, Julien
Ginot, Nicolas
Batard, Christophe
Azzopardi, Stephane
[J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (08) : 8752 - 8760
[3] Condition Monitoring of SiC MOSFETs Utilizing Gate Leakage Current
Wang, Patrick
Zatarski, Joseph
Banerjee, Arijit
Donnal, John
[J]. 2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020), 2020, : 1837 - 1843
[4] Stack Gate Technique for Minimizing Leakage Current in Multigate MOSFETs
Mathew, Juna
Nesamani, I. Flavia Princess
[J]. PROCEEDINGS OF IEEE INTERNATIONAL CONFERENCE ON CIRCUIT, POWER AND COMPUTING TECHNOLOGIES (ICCPCT 2016), 2016,
[5] Investigating the effects of the interface defects on the gate leakage current in MOSFETs
Mao, Ling-Feng
[J]. APPLIED SURFACE SCIENCE, 2008, 254 (20) : 6628 - 6632
[6] Temperature dependent compact modeling of gate tunneling leakage current in double gate MOSFETs
Darbandy, Ghader
Aghassi, Jasmin
Sedlmeir, Josef
Monga, Udit
Garduno, Ivan
Cerdeira, Antonio
Iniguez, Benjamin
[J]. SOLID-STATE ELECTRONICS, 2013, 81 : 124 - 129
[7] Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs
Lee, J
Bosman, G
Green, KR
Ladwig, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (07) : 1232 - 1241
[8] Noise model of gate-leakage current in ultrathin oxide MOSFETs
Lee, J
Bosman, G
Green, KR
Ladwig, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) : 2499 - 2506
[9] ELECTRON-ENERGY DISTRIBUTION FOR CALCULATION OF GATE LEAKAGE CURRENT IN MOSFETS
GOLDSMAN, N
FREY, J
[J]. SOLID-STATE ELECTRONICS, 1988, 31 (06) : 1089 - 1092
[10] Gate Leakage in Low Standby Power 16 nm Gate Length Double-Gate MOSFETs
Abd El Hakim, Mohamed
Sabry, Yasser M.
Elmaghraby, Yousry
Abdolkader, Tarek M.
Fikry, Wael
[J]. NRSC: 2009 NATIONAL RADIO SCIENCE CONFERENCE: NRSC 2009, VOLS 1 AND 2, 2009, : 789 - 797

← 1 2 3 4 5 →