Effect of Oxygen Pressure on Electrical Properties of BiFe0.9Co0.1O3 Thin Films Prepared by Pulsed Laser Deposition

被引：2
|
作者：
Hojo, Hajime [1 ]
Onuma, Ko [1 ]
Ikuhara, Yuichi [2 ]
Azuma, Masaki [1 ]
机构：
[1] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan
[2] Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 09期
关键词：
POLARIZATION ROTATION; CRYSTAL; NONSTOICHIOMETRY; TEMPERATURE;
D O I：
10.7567/JJAP.52.09KD09
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The crystal structures and electrical properties of epitaxial BiFe0.9Co0.1O3 thin films grown by pulsed laser deposition on SrRuO3/SrTiO3(001) substrates under different oxygen pressures were investigated. The unit cell volume of BiFe0.9Co0.1O3 thin films monotonically decreases with increasing oxygen pressure from 10 to 17 Pa, while the leakage current is minimum at 15 Pa. Oxygen content variation in the BiFe0.9Co0.1O3 thin films is proposed to explain the obtained experimental results. The BiFe0.9Co0.1O3 thin film deposited at 15 Pa shows ferroelectric switching behavior with inversion current at room temperature. (C) 2013 The Japan Society of Applied Physics
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页数：3
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