Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics

被引：1
|
作者：
Jin, Liwei [1 ]
Cheng, Zhiqun [1 ,2 ]
Wang, Qingna [1 ]
机构：
[1] Hangzhou Dianzi Univ, Key Lab RF Circuit & Syst, Educ Minist, Hangzhou 310018, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
来源：
INTERNATIONAL JOURNAL OF ANTENNAS AND PROPAGATION | 2013年 / 2013卷
关键词：
HIGH-LINEARITY; ALGAN/GAN HEMT;
D O I：
10.1155/2013/738659
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaNHEMT heterostructure high-mobility transistors (HEMTs) on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. The changing parameters include the gate finger number, the gate width per finger. The measurement results based on common-source devices demonstrate that the above parameters have different effects on the threshold voltage, maximum transconductance, and frequency characteristics.
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页数：3
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