Synthesis and characterization of low-k films for large area imaging applications

被引：1
|
作者：
Jeyakumar, R. [1 ]
Gu, Z. [1 ]
Sivoththaman, S. [1 ]
Nathan, A. [1 ]
机构：
[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada
来源：
MICROELECTRONIC ENGINEERING | 2012年 / 99卷
基金：
加拿大自然科学与工程研究理事会;
关键词：
Low dielectric constant material; Inter-layer dielectrics; Dielectric properties; Thin film transistors; Polymer synthesis;
D O I：
10.1016/j.mee.2012.06.010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An organic liquid polymer based on methyltriethoxysilane has been synthesized. The material;when spin-coated onto wafers and thermally treated;lead to dielectric films of low permittivity;which can be used in hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) based large area imaging arrays as an inter-level dielectric between the TFT and pixel levels. Fourier Transform Infrared Spectroscopy (FTIR) shows prominent peaks of Si-CH3 stretch and Si-O stretch modes. The dielectric constant (k) of the film was found to decrease with increasing curing temperature (T-cure). However;k values were < 3 for T-cure < 260 degrees C;which is the upper limit for our a-Si:H process. Thermogravimetric analysis showed that major weight loss takes place for up to 200 degrees C;and the film stabilizes thereafter. The stress in the films was found to be compressive;and increased from 50 to 220 MPa when T-cure was increased from 250 to 450 degrees C. The low stress for low T-cure is a desirable property for film integration. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：58 / 61
页数：4
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