Texture selection by secondary recrystallization in grain oriented silicon iron: Competitive texture components for Goss grains

The mechanism controlling the Goss oriented secondary recrystallization in Silicon-Iron is discussed in the present paper. The study is based on the results of the general statistical theory of grain growth. It appears that what is responsible for the Goss grains selective growth is their surrounding microstructure (texture and grain size distribution). Moreover, by the same peculiar grain boundary distribution, other texture components have been recognized to experience a growth advantage and under specific conditions can became competitive for Goss during the grain growth and secondary recrystallization process.