STT-MRAM Design Technology Co-optimization for Hardware Neural Networks

被引:0
|
作者
Xu, Nuo [1 ]
Lu, Yang [1 ]
Qi, Weiyi [1 ]
Jiang, Zhengping [1 ]
Peng, Xiaochen [2 ]
Chen, Fan [1 ]
Wang, Jing [1 ]
Choi, Woosung [1 ]
Yu, Shimeng [2 ]
Kim, Dae Sin [3 ]
机构
[1] Samsung Semicond Inc, Device Lab, San Jose, CA 95134 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] Samsung Elect, Semicond R&D Ctr, Hwasung Si, Gyeonggi Do, South Korea
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
the potential of embedded STT-MRAM technology for designing large-scale multiply-and-accumulation (MAC) array circuits are evaluated by comprehensive and holistic design-technology co-optimizations. After careful calibrations with experimental data, post-layout circuit simulations together with GPU-enabled massively parallel Monte Carlo evaluations are conducted to guarantee the designs at rare failure rates. With all critical device and design non-idealities included, architectural emulations are performed to examine the hardware neural network (HNN)'s accuracies and estimate system-level power, performance and area specs. Results indicate the amount of process variation, parasites and error levels to control in order to achieve a feasible solution for STT-MRAM based HNNs.
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页数:4
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