Pressure- and temperature-driven phase transitions in HgTe quantum wells

被引：58
|
作者：
Krishtopenko, S. S. [1 ,2 ]
Yahniuk, I. [3 ]
But, D. B. [2 ]
Gavrilenko, V. I. [1 ,4 ]
Knap, W. [2 ,3 ]
Teppe, F. [2 ]
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, GSP 105, Nizhnii Novgorod 603950, Russia
[2] Univ Montpellier, Lab Charles Coulomb, CNRS, UMR 5221, F-34095 Montpellier, France
[3] Polish Acad Sci, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland
[4] Lobachevsky State Univ Nizhni Novgorod, Pr Gagarina 23, Nizhnii Novgorod 603950, Russia
来源：
PHYSICAL REVIEW B | 2016年 / 94卷 / 24期
基金：
俄罗斯基础研究基金会;
关键词：
DEPENDENCE;
D O I：
10.1103/PhysRevB.94.245402
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present theoretical investigations of pressure- and temperature-driven phase transitions in HgTe quantum wells grown on a CdTe buffer. Using the eight-band k.p Hamiltonian we calculate evolution of energy-band structure at different quantum well widths with hydrostatic pressure up to 20 kbars and temperature ranging up to 300 K. In particular, we show that, in addition to temperature, tuning of hydrostatic pressure allows us to drive transitions between semimetal, band insulator, and topological insulator phases. Our realistic band-structure calculations reveal that the band inversion under hydrostatic pressure and temperature may be accompanied by nonlocal overlapping between conduction and valence bands. The pressure and temperature phase diagrams are presented.
引用
收藏
页数：8
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