Multistage model of diffusion formation of inclusions of a silicide NiSi2 phase in film system of Ni (10nm)/Si(001)

被引：0

作者：

Sidorenko, SI ^{[1
]}

Voloshko, SM ^{[1
]}

Makogon, YM ^{[1
]}

Pavlova, OP ^{[1
]}

Zamulko, SO ^{[1
]}

Mogilatenko, AV ^{[1
]}

Beddies, G ^{[1
]}

机构：

[1] Natl Tech Univ Ukraine, Kiev Polytech Inst, Kiev, Ukraine

来源：

METALLOFIZIKA I NOVEISHIE TEKHNOLOGII | 2005年 / 27卷 / 11期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermally induced solid-state reactions in the Ni(10nm)/Si(001)-film system, which occur during the annealing in the nitrogen ambient, are investigated by the methods of cross-section TEM and SEM of the surface morphology. As revealed, the process of formation of a final product of the solid-state reactions (that is NiSi2) consists of several stages.

引用

页码：1529 / 1537

页数：9

共 17 条

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[5] Structural and concentration inhomogeneities at formation of silicide phases in film system of Ti(5 nm)/Ni(24 nm)/Si(001)
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[6] Silicide formation process in ultra-thin Ni-silicide film for advanced semiconductor devices: mechanism of NiSi2 formation at low temperature
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[7] Atomic structure of a Ni diffused Si (001) surface layer: Precursor to formation of NiSi2 at low temperature
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JOURNAL OF APPLIED PHYSICS, 2010, 107 (03)
[8] Low-temperature formation of epitaxial NiSi2 layers with solid-phase reaction in Ni/Ti/Si(001) systems
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[9] Low-temperature formation of epitaxial NiSi2 layers with solid-phase reaction in Ni/Ti/Si(001) systems
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[10] Processes of Phase Formation and Thermal Stability of NiSi in Nanoscale Film Ni(30 nm)/Pt(2; 6 nm)/Siepit. (50 nm)/Si(001) Composition
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