Advances in high-brightness semiconductor lasers

被引：1

作者：

Osowski, M. L. ^{[1
]}

Hu, W. ^{[1
]}

Lammert, R. M. ^{[1
]}

Oh, S. W. ^{[1
]}

Rudy, P. T. ^{[1
]}

Stakelon, T. ^{[1
]}

Valssie, L. ^{[1
]}

Ungar, J. E. ^{[1
]}

机构：

[1] QPC Lasers Inc, Sylmar, CA 91342 USA

来源：

LASER SOURCE TECHNOLOGY FOR DEFENSE AND SECURITY IV | 2008年 / 6952卷

关键词：

diode; laser; semiconductor; bar; stack; array; single mode; visible;

D O I：

10.1117/12.777065

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present recent advances in high power semiconductor laser bars and arrays at near infrared and eye-safe wavelengths. We report on increased spectral brightness with internal gratings to narrow and stabilize the spectrum and increased spatial brightness in multimode and single mode devices. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.

引用

页数：8

共 50 条

[1] Advances in high brightness semiconductor lasers
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[2] Advances in high-brightness semiconductor lasers - art. no. 68761E
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