Theoretical studies on piezoresistive effect of P-type diamond films

In this paper. based on the Fuchs and Sondheimer theory and valence band split-off model, a theoretical description of the piezoresistive effect in P-type heteroepitaxial diamond films was, PC presented by solving the Boltzmann transport equation in the relaxation time approximation, in which a mixed scattering by lattice vibration, ionized impurities and surface was considered. A calculating expression of the piezoresistive effect has been developed in a parallel connection resistance model for the light-hole band, the heavy-hole band and the split-off band. The calculating results were in good agreement with the experimental data, indicating that the prezoresistive effect in diamond films was mainly ascribed to the hole band split-off under a uniaxial stress.