Simulation of memristors in presence of high-frequency forcing function

被引:0
|
作者
Condon, M. [1 ,2 ]
Deano, A. [3 ]
Iserles, A. [4 ]
机构
[1] Dublin City Univ, Sch Elect Engn, Dublin 9, Ireland
[2] Dublin City Univ, Rince Inst, Dublin 9, Ireland
[3] Univ Carlos III Madrid, Dept Math, Madrid 28911, Spain
[4] Univ Cambridge, Ctr Math Sci, Dept Appl Math & Theoret Phys, Cambridge CB3 0WA, England
关键词
D O I
10.1049/el.2012.1051
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This reported work is concerned with the simulation of memristors when they are subject to high-frequency forcing functions. A novel asymptotic-numeric simulation method is applied. For systems involving high-frequency signals or forcing functions, the superiority of the proposed method in terms of accuracy and efficiency when compared to standard simulation techniques is illustrated. Relevant dynamical properties in relation to the method are also considered.
引用
收藏
页码:684 / 686
页数:3
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