Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

被引：9

作者：

Querre, M. ^{[1
,2
]}

Tranchant, J. ^{[1
]}

Corraze, B. ^{[1
]}

Cordier, S. ^{[2
]}

Bouquet, V. ^{[2
]}

Deputier, S. ^{[2
]}

Guilloux-Viry, M. ^{[2
]}

Besland, M. -P. ^{[1
]}

Janod, E. ^{[1
]}

Cario, L. ^{[1
]}

机构：

[1] Univ Nantes, Inst Mat Jean Rouxel IMN, UMR CNRS 6502, F-44322 Nantes, France

[2] Univ Rennes 1, ISCR, UMR CNRS 6226, F-35042 Rennes, France

来源：

PHYSICA B-CONDENSED MATTER | 2018年 / 536卷

关键词：

Mott insulators; V2O3; Mott transition; Resistive switching; Non-volatile memory; ReRAM; TRANSITION; SUPERCONDUCTIVITY;

D O I：

10.1016/j.physb.2017.10.060

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)(2)O-3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)(2)O-3. Our work demonstrates also reversible resistive switching in (V1-xCrx)(2)O-3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)(2)O-3.

引用

页码：327 / 330

页数：4

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