Topological Anderson insulator in two-dimensional non-Hermitian systems

被引:27
|
作者
Liu, Hongfang [1 ]
Su, Zixian [1 ]
Zhang, Zhi-Qiang [1 ]
Jiang, Hua [1 ,2 ]
机构
[1] Soochow Univ, Sch Phys & Technol, Suzhou 215006, Peoples R China
[2] Soochow Univ, Inst Adv Study, Suzhou 215006, Peoples R China
基金
中国国家自然科学基金;
关键词
disorder effect; topological Anderson insulator; non-Hermitian systems; CATALOG;
D O I
10.1088/1674-1056/ab8201
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the disorder-induced phase transition in two-dimensional non-Hermitian systems. First, the applicability of the noncommutative geometric method (NGM) in non-Hermitian systems is examined. By calculating the Chern number of two different systems (a square sample and a cylindrical one), the numerical results calculated by NGM are compared with the analytical one, and the phase boundary obtained by NGM is found to be in good agreement with the theoretical prediction. Then, we use NGM to investigate the evolution of the Chern number in non-Hermitian samples with the disorder effect. For the square sample, the stability of the non-Hermitian Chern insulator under disorder is confirmed. Significantly, we obtain a nontrivial topological phase induced by disorder. This phase is understood as the topological Anderson insulator in non-Hermitian systems. Finally, the disordered phase transition in the cylindrical sample is also investigated. The clean non-Hermitian cylindrical sample has three phases, and such samples show more phase transitions by varying the disorder strength: (1) the normal insulator phase to the gapless phase, (2) the normal insulator phase to the topological Anderson insulator phase, and (3) the gapless phase to the topological Anderson insulator phase.
引用
收藏
页数:9
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