Control of composition and structure of ferroelectric oxide thin films grown by pulsed laser deposition

被引：1
|
作者：
Guilloux-Viry, Maryline [1 ]
Peng, Wei [1 ]
Deputier, Stephanie [1 ]
Bouquet, Valerie [1 ]
Perrin, Andre [1 ]
机构：
[1] Univ Rennes 1, CNRS, Unite Sci Chim Rennes, UMR 6226, F-35042 Rennes, France
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 10 | 2008年 / 5卷 / 10期
关键词：
D O I：
10.1002/pssc.200879512
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
SrBi2Nb2O9 and KTa1-xNbxO3 high quality thin films were grown by pulsed laser deposition. An accurate optimization of deposition conditions is a prerequisite for the control of composition, mainly according to the high volatility of Bi and K. In order to take benefit of the ferroelectric characteristics for new microelectronics devices thin films were epitaxially grown on various substrates and seed layers adapted to application requirements. For that purpose metal electrodes and ferroelectric oxides were associated in a planar capacitor geometry or in a coplanar configuration depending on the targeted applications. [GRAPHICS] (C) 2008 WILEY-VCH Vertag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：3293 / 3297
页数：5
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