Retrieval property of associative memory with negative resistance

被引:0
|
作者
Hayakawa, Y [1 ]
Li, HG [1 ]
Nakajima, K [1 ]
机构
[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 980, Japan
关键词
D O I
暂无
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
The self-connection can enlarge the memory capacity of an associative memory based on the neural network, however, the basin size of the embedded memory state shrinks. The problem of basin size is related to undesirable stable states which are spurious states. If we can destabilize these spurious states, we expect to improve the basin size. The Inverse Function Delaved(ID) model which includes the BVP model has the ne-ative resistance on its dynamics. The negative resistance of the ID model can destabilize the equilibrium states on some regions of conventional neural network. Hence, the associative memory based on the ID model has possibilities of improving the basin size of the network which has the self-connection in order to enlarge a memory capacity. In this paper, we show the improvement of performance compared with the conventional neural network by computer simulation.
引用
收藏
页码:1187 / 1192
页数:6
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