A monolithic active pixel sensor for particle detection in 0.25 μm CMOS technology

被引：11

作者：

Velthuis, JJ

Allport, PP

Casse, G

Evans, A

Turchetta, R

Villani, G

机构：

[1] Univ Liverpool, Oliver Lodge Lab, Liverpool L69 7ZE, Merseyside, England

[2] Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2006年 / 560卷 / 01期

关键词：

active pixel sensors; CMOS; imaging; tracking; solid-state detectors;

D O I：

10.1016/j.nima.2005.11.232

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We are developing CMOS monolithic active pixel sensors (MAPS) for High Energy Physics applications. We have successfully produced 3 test structures. They feature several different pixel types including: standard 3MOS, 4MOS allowing Correlated Double Sampling (CDs), charge amplifier pixels and a flexible APS (FAPS). The FAPS has a 10 deep pipeline on each pixel. This is specifically designed with the beam structure of the TESLA proposal for the Linear Collider in mind. Results of a laser test on our first device and source test results on two more recent test structures will be presented. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：40 / 43

页数：4

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