Fully Integrated Single-Inductor Multiple-Output (SIMO) DC-DC Converter in CMOS 65 nm Technology

被引:0
|
作者
Soto, Angel J. [1 ]
Lindstrom, Esteban O. [1 ]
Oliva, Alejandro R. [1 ]
Mandolesi, Pablo S. [1 ]
Dualibe, Fortunato Carlos
机构
[1] Univ Nacl Sur, Alfredo Desages UNS CONICET, Depto Ing Elect & Comp, Inst Invest Ing Elect IIIE, RA-8000 Bahia Blanca, Buenos Aires, Argentina
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the nanoscale technologies, the on-chip Power Management design strategy as a part of a System on Chip (SoC) is becoming extremely important. This work presents a fully integrated SIMO converter in a CMOS 65 nm technology. Since passive components are also integrated and their values should result relatively small the converter operates at a switching frequency of 200 MHz. This version counts with a step-up and a step-down outputs, but it can be easily extended to more otuputs. A suitable control strategy for high speed and nano-scale process together with system simulation results are discused.
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页数:4
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