Development of Periodically Oriented Gallium Nitride

被引：0

作者：

Hite, Jennifer K. ^{[1
]}

Twigg, Mark E. ^{[1
]}

Bassim, Nabil D. ^{[1
]}

Mastro, Michael A. ^{[1
]}

Freitas, Jaime A., Jr. ^{[1
]}

Meyer, Jerry R. ^{[1
]}

Vurgaftman, Igor ^{[1
]}

O'Connor, Shawn ^{[1
]}

Condon, Nicholas J. ^{[1
]}

Kub, Francis J. ^{[1
]}

Bowman, Steven R. ^{[1
]}

Eddy, Charles R., Jr. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2012年

关键词：

2ND-HARMONIC GENERATION; GAN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Methods for growing periodically alternating polarities of GaN on GaN substrates have been developed. The resulting periodically oriented samples can be extended to thick growth, allowing their use in non-linear optics.

引用

页数：2

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