Varying characteristics of bipolar transistors with emitter contact window width

被引：0

作者：

Fu, J ^{[1
]}

Mijalkovic, S ^{[1
]}

Eysenga, WJ ^{[1
]}

van Zeijl, HW ^{[1
]}

Crans, W ^{[1
]}

机构：

[1] Delft Inst Microelect & Submicron Technol, DIMES, NL-2600 GB Delft, Netherlands

来源：

SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001 | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

On the basis of careful selection and calibration of model parameters we performed process and subsequent device simulation on WEB bipolar transistors. As a result, we concluded, that the mechanical stresses may be responsible for the measured varying device DC characteristics with emitter contact window width.

引用

页码：308 / 311

页数：4

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