0.1 μm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy

被引：4

作者：

Zaknoune, M ^{[1
]}

Schuler, O ^{[1
]}

Mollot, F ^{[1
]}

Théron, D ^{[1
]}

Crosnier, Y ^{[1
]}

机构：

[1] Inst Elect & Microelect Nord, UMR CNRS 9929, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 20期

关键词：

D O I：

10.1049/el:19991196

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully realised a 0.1 mu m T-gate pseudomorphic (Al0.5Ga0.5)(0.5)In0.5P/In0.2Ga0.8As/GaAs high electron mobility transistor (PM-HEMT) grown on a GaAs substrate by gas source molecular beam epitaxy (GSMBE). The electronic transfer and mobility of the (AlxGa1-x)(0.5)In0.5P/In0.2Ga0.8As structure as functions of the aluminium composition have been studied. The ohmic contact has also been optimised. For a single-side doped structure, the devices exhibit the best RF and DC performances of the AlGaInP/InGaAs system with a current density of 430mA/mm and an extrinsic transconductance Gm of 550mS/mm. The cutoff frequencies have been determined to be Ft = 100GHz and Fmax = 160GHz at Vds = 1.5V. These excellent performances clearly show the high-quality material grown by GSMBE.

引用

页码：1776 / 1777

页数：2

共 50 条

[1] 0.1 μm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy
Inst. d'Electron. Microlectron. Nord, U.M.R.-C.N.R.S. 9929, Dept. Hyperfrequences S., Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France
[J]. Electron. Lett., 20 (1776-1777):
[2] (AlxGa1-x)0.5In0.5P barrier layer grown by Gas Source Molecular Beam Epitaxy for V-band (AlxGa1-x)0.5In0.5P/In0.2Ga0.8As/GaAs power Pseudomorphic HEMT
Zaknoune, M.
Schuler, O.
Wallart, X.
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Mollot, F.
Theron, D.
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[J]. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, : 353 - 356
[3] (AlxGa1-x)0.5In0.5P barrier layer grown by gas source molecular beam epitaxy for V-band (AlxGa1-x)0.5In0.5P/In0.2Ga0.8As/GaAs power pseudomorphic HEMT
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Schuler, O
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[J]. 2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 353 - 356
[4] Linear electrooptic effect in ordered (Al0.5Ga0.5)0.5In0.5P
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