Si-H vibrational mode on a H-Si(111)1 x 1 surface with hydrogen deficiency

被引:7
|
作者
Miyauchi, Yoshihiro [1 ]
Chuat, Hien [1 ]
Mizutani, Goro [1 ]
机构
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan
基金
日本学术振兴会;
关键词
Dipole-dipole interaction; Sum frequency generation; Hydrogen; Silicon; Vibration; TERMINATED SI(111) SURFACE; SUM-FREQUENCY GENERATION; DESORPTION-KINETICS; MONOHYDRIDE PHASE; SI(100); SPECTROSCOPY; ADSORPTION;
D O I
10.1016/j.susc.2013.03.016
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We used a dipole coupling theory to calculate modulations of the Si-H vibrational mode on a H Si(111)1 x 1 surface, and analyzed the observed optical sum frequency generation (SFG) spectra. As the hydrogen coverage decreased, the peak position of the Si-H vibrational mode shifted to the red side in the experimental SFG spectra [Hien et al., Surf. Int. Anal., 44 662 (2012)]. The calculated peak shift was quantitatively consistent with the observed redshift, indicating that the peak shift can be attributed to dipole coupling among the Si-H oscillators. On the other hand, the experimental peak widths at lower coverages were wider than those of the calculated peaks. This suggests that local structural defects and/or dangling bonds modulated the vibration of the surrounding Si-H oscillators. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:24 / 29
页数:6
相关论文
共 50 条
  • [1] Modulation of Si-H vibrational mode as a function of the hydrogen coverage on a H-Si(111)1x1 surface
    Miyauchi, Yoshihiro
    Hien, Khuat Thi Thu
    Mizutani, Goro
    [J]. ICPS 2013: INTERNATIONAL CONFERENCE ON PHOTONICS SOLUTIONS, 2013, 8883
  • [2] VIBRATIONAL-ENERGY RELAXATION OF SI-H STRETCHING MODES ON THE H/SI(111)1X1 SURFACE
    GAI, HD
    VOTH, GA
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1993, 99 (01): : 740 - 743
  • [3] VIBRATIONAL DYNAMICS OF THE SI-H STRETCHING MODES OF THE SI(100)/H-2X1 SURFACE
    GUYOTSIONNEST, P
    LIN, PH
    HILLER, EM
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1995, 102 (10): : 4269 - 4278
  • [4] Reactivity of the H-Si (111) surface
    Terry, J
    Mo, R
    Wigren, C
    Cao, RY
    Mount, G
    Pianetta, P
    Linford, MR
    Chidsey, CED
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 133 (1-4): : 94 - 101
  • [5] SURFACE PHONONS OF HYDROGEN-TERMINATED SEMICONDUCTOR SURFACES .1. THE H-SI(111)-(1X1) SURFACE
    SANDFORT, B
    MAZUR, A
    POLLMANN, J
    [J]. PHYSICAL REVIEW B, 1995, 51 (11): : 7139 - 7149
  • [6] VIBRATIONAL-ENERGY RELAXATION DYNAMICS OF SI-H STRETCHING MODES ON STEPPED H/SI(111) 1X1 SURFACES
    SUN, YC
    GAI, HD
    VOTH, GA
    [J]. CHEMICAL PHYSICS, 1995, 200 (03) : 357 - 368
  • [7] Synchrotron radiation induced Si-H dissociation on H-Si(111)-1 X 1 surfaces studied by in situ monitoring in the undulator-scanning tunneling microscope system
    Nonogaki, Y
    Urisu, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (05): : 1364 - 1366
  • [8] Surface phonons of Si(111):H-(1 x 1) and Si(111):As-(1 x 1)
    Honke, R
    Pavone, P
    Schroder, U
    [J]. SURFACE SCIENCE, 1996, 367 (01) : 75 - 86
  • [9] LINESHAPE OF THE SI-H STRETCHING VIBRATION FOR THE IDEALLY H-TERMINATED SI(111)1 BY 1
    DUMAS, P
    CHABAL, YJ
    HIGASHI, GS
    [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1990, 54 : 103 - 108
  • [10] Optical second harmonic intensity images of hydrogen deficiency on H-Si(111) surfaces
    Miyauchi, Y.
    Sano, H.
    Mizutani, G.
    [J]. E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2006, 4 : 105 - 109