Spin-Orbit Splitting in Single-Layer MoS2 Revealed by Triply Resonant Raman Scattering

被引：134

作者：

Sun, Linfeng ^{[1
]}

Yan, Jiaxu ^{[1
]}

Zhan, Da ^{[1
,2
]}

Liu, Lei ^{[3
]}

Hu, Hailong ^{[1
,2
]}

Li, Hong ^{[4
]}

Tay, Ben Kang ^{[4
]}

Kuo, Jer-Lai ^{[5
]}

Huang, Chung-Che ^{[6
]}

Hewak, Daniel W. ^{[6
]}

Lee, Pooi See ^{[2
]}

Shen, Ze Xiang ^{[1
,2
]}

机构：

[1] Nanyang Technol Univ, Sch Phys & Math Sci, Ctr Disrupt Photon Technol, Singapore 637371, Singapore

[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Mat Technol Div, Singapore 639798, Singapore

[3] Chinese Acad Sci, CIOMP, Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China

[4] Nanyang Technol Univ, Sch Elect & Elect Engn, Microelect Ctr, Singapore 639798, Singapore

[5] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan

[6] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 111卷 / 12期

基金：

英国工程与自然科学研究理事会;

关键词：

TOTAL-ENERGY CALCULATIONS; TRANSITION;

D O I：

10.1103/PhysRevLett.111.126801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Although new spintronic devices based on the giant spin-orbit splitting of single-layer MoS2 have been proposed, such splitting has not been studied effectively in experiments. This Letter reports the valence band spin-orbit splitting in single-layer MoS2 for the first time, probed by the triply resonant Raman scattering process. We found that upon 325 nm laser irradiation, the second order overtone and combination Raman modes of single-layer MoS2 are dramatically enhanced. Such resonant Raman enhancement arises from the electron-two-phonon triple resonance via the deformation potential and Fro "hlich interaction. As a sensitive and precise probe for the spin-orbit splitting, the triply resonant Raman scattering will provide a new and independent route to study the spin characteristics of MoS2.

引用

页数：5

共 50 条

[1] Effect of disorder on Raman scattering of single-layer MoS2
Mignuzzi, Sandro
Pollard, Andrew J.
Bonini, Nicola
Brennan, Barry
Gilmore, Ian S.
Pimenta, Marcos A.
Richards, David
Roy, Debdulal
PHYSICAL REVIEW B, 2015, 91 (19)
[2] Effect of spin-orbit interaction on the optical spectra of single-layer, double-layer, and bulk MoS2
Molina-Sanchez, Alejandro
Sangalli, Davide
Hummer, Kerstin
Marini, Andrea
Wirtz, Ludger
PHYSICAL REVIEW B, 2013, 88 (04)
[3] SINGLE-LAYER MOS2
JOENSEN, P
FRINDT, RF
MORRISON, SR
MATERIALS RESEARCH BULLETIN, 1986, 21 (04) : 457 - 461
[4] Spin-Orbit Effects in MoS2 Nanotubes
Milivojevic, Marko
Dmitrovic, Sasa
Damnjanovic, Milan
Vukovic, Tatjana
JOURNAL OF PHYSICAL CHEMISTRY C, 2020, 124 (20): : 11141 - 11149
[5] Layer-dependent resonant Raman scattering of a few layer MoS2
Chakraborty, Biswanath
Matte, H. S. S. Ramakrishna
Sood, A. K.
Rao, C. N. R.
JOURNAL OF RAMAN SPECTROSCOPY, 2013, 44 (01) : 92 - 96
[6] Antiferromagnetic single-layer spin-orbit torque oscillators
Troncoso, Roberto E.
Rode, Karsten
Stamenov, Plamen
Coey, J. Michael D.
Brataas, Arne
PHYSICAL REVIEW B, 2019, 99 (05)
[7] Spin-orbit coupling effects in single-layer phosphorene
Peralta, Mayra
Freire, Dennis A.
Gonzalez-Hernandez, Rafael
Mireles, Francisco
PHYSICAL REVIEW B, 2024, 110 (08)
[8] ELECTRONIC PROPERTIES OF BULK AND SINGLE-LAYER MOS2 USING AB INITIO DFT: APPLICATION OF SPIN-ORBIT COUPLING (SOC) PARAMETERS
Gyan, Michael
Botchway, Francis E.
Parbey, Joseph
EAST EUROPEAN JOURNAL OF PHYSICS, 2020, (04): : 69 - 74
[9] Single-Layer MoS2 Phototransistors
Yin, Zongyou
Li, Hai
Li, Hong
Jiang, Lin
Shi, Yumeng
Sun, Yinghui
Lu, Gang
Zhang, Qing
Chen, Xiaodong
Zhang, Hua
ACS NANO, 2012, 6 (01) : 74 - 80
[10] Single-layer MoS2 transistors
Radisavljevic, B.
Radenovic, A.
Brivio, J.
Giacometti, V.
Kis, A.
NATURE NANOTECHNOLOGY, 2011, 6 (03) : 147 - 150

← 1 2 3 4 5 →