Diamond-like carbon (DLC) liner: A new stressor for p-channel multiple-gate field-effect transistors

被引：10
|
作者：
Tan, Kian-Ming [1 ,2 ]
Fang, Wei-Wei [1 ]
Yang, Mingchu [3 ]
Liow, Tsung-Yang [1 ,2 ]
Lee, Rinus T. -P. [1 ]
Balasubramanian, Narayanan [2 ]
Yeo, Yee-Chia [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore
[2] Inst Microelect, Singapore 117685, Singapore
[3] Data Storage Inst, Singapore 117608, Singapore
来源：
IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 07期
关键词：
contact etch stop layer (CESL); diamond-like carbon (DLC); FinFET; multiple-gate; strain;
D O I：
10.1109/LED.2008.923710
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the first demonstration of a p-channel multiple-gate (trigate) FinFET with a liner stressor comprising diamond-like carbon (DLC) film. We also report on the detailed process that enables the adhesion of DLC with ultrahigh compressive stress on the three-dimension topology of the FinFET structure. The intrinsic compressive stress for the DLC film is 6 GPa, the highest ever reported for a liner stressor formed over a multiple-gate device structure or FinFET. A high stress-thickness product was successfully realized without film delamination. This leads to a very significant drive current boost for the FinFET with DLC liner stressor as compared to a control FinFET without the DLC liner.
引用
收藏
页码：750 / 752
页数：3
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