Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

被引：10
|
作者：
Okumura, Hironori [1 ,2 ]
Martin, Denis [2 ]
Grandjean, Nicolas [2 ]
机构：
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[2] Ecole Polytech Fed Lausanne, Inst Phys, CH-1015 Lausanne, Switzerland
来源：
APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 25期
关键词：
NONALLOYED OHMIC CONTACTS; ELECTRICAL-PROPERTIES; SURFACE-TREATMENT; LEAKAGE CURRENT; N-DIODES; INTERFACES; SILICON; OXIDES;
D O I：
10.1063/1.4972408
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 10 19 cm(-3) range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between N-A-N-D and the specific contact resistivity (rho c). We found that there is an optimum N-A-N-D value of 5 x 10(19) cm(-3) for which rho c is as low as 2 x 10(-5) Omega cm(2). This low rho c is ascribed to hole tunneling through the potential barrier at the NiO/p(+)-GaN interface, which is well accounted for by the field-emission model. Published by AIP Publishing.
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页数：5
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