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- [2] ANOMALOUS REGIMES FOR GAAS ETCHING IN CL2-AR PLASMAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (05): : 1584 - 1591
- [4] Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl2-Ar mixture JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (02): : 366 - 371
- [8] Characteristics of Ir etching using Ar/Cl2 inductively coupled plasmas Journal of Materials Science, 2005, 40 : 5015 - 5016
- [9] Etch characteristics of GaN using inductively coupled Cl-2/HBr and Cl-2/Ar plasmas GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 367 - 372
- [10] Tantalum carbide etch characterization in inductively coupled Ar/Cl2/HBr plasmas JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (05): : 1764 - 1775