Preparation and characteristics of MoSe2 interlayer in bifacial Cu(In,Ga)Se2 solar cells

被引：40

作者：

Pang, J. B. ^{[1
]}

Cai, Y. A. ^{[1
]}

He, Q. ^{[1
]}

Wang, H. ^{[1
]}

Jiang, W. L. ^{[1
]}

He, J. J. ^{[1
]}

Yu, T. ^{[1
]}

Liu, W. ^{[1
]}

Zhang, Y. ^{[1
]}

Sun, Y. ^{[1
]}

机构：

[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, 94 Weijin Rd, Tianjin 300071, Peoples R China

来源：

18TH INTERNATIONAL VACUUM CONGRESS (IVC-18) | 2012年 / 32卷

基金：

中国国家自然科学基金;

关键词：

MoSe2; selenization; Cu(In; Ga)Se-2; ohmic contact; bifacial solar cells; CONTACTS; TRANSPARENT;

D O I：

10.1016/j.phpro.2012.03.571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MoSe2 thin films were formed simply by the selenization of Mo on bare soda lime glass substrate and glass coated with ZnO:Ga. Preliminarily, the structural property of MoSe2 was studied on bare soda lime glass with X-ray diffraction and Raman spectra. Furthermore, the electrical property of MoSe2 was discussed as the interlayer between the Cu(In,Ga)Se-2/ZnO:Ga double layers. Finally, bifacial solar cells with MoSe2 interlayer were illustrated with current-voltage curve and quantum efficiency. (C) 2012 Published by Elsevier B.V. Selection and/or peer review under responsibility of Chinese Vacuum Society (CVS).

引用

页码：372 / 378

页数：7

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