Peculiarities of defect formation processes in ZnSe crystals with isovalent Te impurity

被引：1

作者：

Makhniy, VP

Tkachenko, IV

Gorley, PM ^{[2
]}

Horley, PP

Dugaev, VK

Barnas, J

Vieira, MM

Dobrowolski, W

机构：

[1] Yuri Fedkovych Chernivtsi Natl Univ, Dept Opt Elect, 2 Kotsyubynsky Str, UA-58012 Chernovtsy, Ukraine

[2] Yuri Fedkovych Chernivtsi Natl Univ, Dept Elect & Energy Engn, 2 Kotsyubynsky Str, UA-58012 Chernovtsy, Ukraine

[3] Natl Acad Sci Ukraine, Frantsevich Inst Problems Mat Sci, UA-58001 Chernovtsy, Ukraine

[4] Inst Super Tecn, CFIF, Dept Phys, P-1049001 Lisbon, Portugal

[5] Adam Mickiewicz Univ, Polish Acad Sci, Inst Mol Phys, Dept Phys, PL-60179 Poznan, Poland

[6] Inst Super Engn Lisboa, Dept Elect & Commun, P-1049001 Lisbon, Portugal

[7] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4 | 2006年 / 3卷 / 04期

关键词：

D O I：

10.1002/pssc.200564708

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Using quasi-chemical reaction methods, we calculated concentrations of equilibrium defects for zinc selenide crystals doped with ZnSe < Te > during the growth process and with ZnSe:Te from the vapour phase. It was found that the main irradiation peak at h omega(m) approximate to 1.7 eV for ZnSe < Te > samples is defined with the associates formed by single-charge intrinsic defects - positive interstitial zinc atoms Zn-i(*) and its negative vacancies V'(Zn). These vacancies, reaching the concentrations of 10(22) cm(-3) in ZnSe:Te crystals, are also responsible for the luminescence and absorption peaks at the energies of 2.4 eV.

引用

页码：829 / +

页数：2

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