Indirect absorption edge of TlGaSe2 crystals

被引：52
|
作者：
Grivickas, V
Bikbajevas, V
Grivickas, P
机构：
[1] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-10223 Vilnius, Lithuania
[2] Washington State Univ, Inst Shock Phys, Pullman, WA 99164 USA
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 05期
关键词：
D O I：
10.1002/pssb.200642069
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Absorption spectra of high-quality layered TlGaSe2 single crystals were measured in a wide temperature range. Results obtained at low temperatures show that the direct excitonic absorption initiating at E-Gdir = 2.127 eV is perturbed by several series of step-like features inherent for the indirect type transitions. Spectral modelling of these features revealed that: (i) the ground state of indirect exciton, n = 1, has a large Rydberg energy of about 100 meV, and (ii) the enhanced absorption to excited indirect excitonic states, n = 2, 3, exceeds the classical prediction for scaling factors K-ind(1)/n(3). (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：R31 / R33
页数：3
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