Residual stress and dielectric property of Al2O3 films on n-type Si-(100) substrate

The aluminum oxide (Al2O3) films are grown on n-type Si-(100) substrate by electron beam evaporation depending on the different substrate temperatures. The residual stress, I-V and C-V characteristics are investigated by wafer stress analyzer and capacitance meter, respectively. The results show that different temperature is important condition to the preparation of Al2O3 film. It can be concluded that the residual stress increases with increasing the substrate temperature, while the stress decreases after annealing in N-2 condition. C-V characteristic curves reveal that capacitance increases while the temperature increases. It also can be found that capacitance becomes smaller in the same substrate temperature at various frequencies of 100K, 500K and 1M.