Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application

We have designed and fabricated hybrid nanodots structures, in which Si quantum dots (QDs) and either Ni-silicide or Pt-silicide nanodots (NDs) are stacked with ultrathin SiO2 interlayer, as a novel functional floating gate (FG) to satisfy both multiple valued capability and large capacity on charge storage. Multiple-step charge injection to silicide NDs through discrete energy states in Si-QDs and stable storage of many charges in deep potential wells in silicide NDs have been confirmed from electrical characteristics of MOS capacitors and transistors measured at room temperature. A unique optical response of the hybrid NDs FG to near-infrared light irradiation, which is caused by the transfer of photo-excited electrons from silicide NDs to Si-QDs, has also been demonstrated.