Low-Frequency Electronic Noise in Single-Layer MoS2 Transistors

被引：220
|
作者：
Sangwan, Vinod K. [1 ]
Arnold, Heather N. [1 ]
Jariwala, Deep [1 ]
Marks, Tobin J. [1 ,2 ]
Lauhon, Lincoln J. [1 ]
Hersam, Mark C. [1 ,2 ]
机构：
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
来源：
NANO LETTERS | 2013年 / 13卷 / 09期
基金：
美国国家科学基金会;
关键词：
Molybdenum disulfide; transition metal dichalcogenide; 1/f noise; generation-recombination noise; Hooge parameter; nanoelectronics; GENERATION-RECOMBINATION NOISE; 1/F NOISE; FLICKER NOISE; MOBILITY; DEVICES; MODEL;
D O I：
10.1021/nl402150r
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Ubiquitous low-frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low-frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (<10(-5) Torr). The field-effect mobility decreased, and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 to 6.5 K.
引用
收藏
页码：4351 / 4355
页数：5
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