Tetrahedral elements in self-consistent parallel 3D Monte Carlo simulations of MOSFETs

被引：3

作者：

Aldegunde, M. ^{[1
]}

Garcia-Loureiro, A. J. ^{[1
]}

Martinez, A. ^{[2
]}

Kalna, K. ^{[2
]}

机构：

[1] Univ Santiago de Compostela, Dept Elect & Computac, Santiago De Compostela 15782, Spain

[2] Univ Glasgow, Dept Elect & Elect Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2008年 / 7卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

Tetrahedral elements; Monte Carlo simulation; Finite element method; Parallel device simulation; MOSFET;

D O I：

10.1007/s10825-008-0241-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel thin-body architectures with complex geometry are becoming of large interest because they are expected to deliver the ITRS prescribed on-current when semiconductor transistors are scaled into nanometer dimensions. We report on the development of a 3D parallel Monte Carlo simulator coupled to a finite element solver for the Poisson equation in order to correctly describe the complex domains of advanced FinFET transistors. We study issues such as charge assignment, field calculation, treatment of contacts and parallelisation approach which have to be taken into account when using tetrahedral elements. The applicability of the simulator is demonstrated by modelling a 10 nm gate length double gate MOSFET with a body thickness of 6.1 nm.

引用

页码：201 / 204

页数：4

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