Three-dimensional, W-band circuits using Si micromachining

被引：0
|
作者：
Henderson, RM [1 ]
Weller, TM [1 ]
Katehi, LPB [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 1999年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents results from the development effort of Si micromachined three-dimensional high density circuits for W-band operation. Measurements of the performance of a power distribution network in a multilayer environment show that on-wafer packaging improves performance and allows for high density integration, small size, and considerably reduced cost.
引用
收藏
页码：441 / 444
页数：4
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