A Retrospective on the SiGe HBT: What We Do Know, What We Don't Know, and What We Would Like to Know Better

被引:0
|
作者
Cressler, John D. [1 ]
机构
[1] Georgia Tech, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
关键词
Silicon-Germanium; SiGe; Heterojunction bipolar transistor; HBT; BiCMOS; strained layer epitaxy;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
By any reasonable reckoning, SiGe HBT BiCMOS technology has "come of age," as evidenced by a robust set of sources for SiGe fabrication around the world (including open foundries in the USA, Europe and Asia), multiple generational scaling nodes in production (3, soon to be 4), significant market penetration in a diverse set of performance-constrained analog, digital and RF systems, and recognized appeal for use in emerging mm-wave through near-THz electronic systems. In this retrospective on the SiGe HBT, I share a personal view of what we do know, what we don't know, and what we would like to know better, from the perspective of materials, devices, technology, circuits, and applications.
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页码:81 / 83
页数:3
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