High field insulation relevant to vacuum microelectronic devices

被引：3

作者：

Sudarshan, TS ^{[1
]}

Ma, XY ^{[1
]}

Muzykov, PG ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION | 2002年 / 9卷 / 02期

关键词：

D O I：

10.1109/94.993738

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper briefly introduces our recent results on high field vacuum insulation relevant to vacuum microelectronics. It addresses the key factors that contribute to the failure of the vacuum gap insulation. Approaches to the development of specific solutions to improve the vacuum gap breakdown voltages are presented. Solutions to alleviate the edge breakdown effect in the thin-film vacuum gap and to inhibit the formation of electrical activity in the spacer triple junction area were proven to be very effective in improving the vacuum insulation performance of vacuum microelectronics. The influence of the presence of an electron beam on the plain-vacuum-gap insulation is also reported.

引用

页码：216 / 225

页数：10

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