One-step synthesis of SnO2-core/Ga2O3-shell nanowires by thermal evaporation

被引：3
|
作者：
Park, Sunghoon [1 ]
Ko, Hyunsung [1 ]
An, Soyeon [1 ]
Lee, Chongmu [1 ]
机构：
[1] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea
来源：
MATERIALS LETTERS | 2013年 / 94卷
关键词：
Ga2O3; SnO2; Core-shell nanowires; One-step synthesis; Thermal evaporation; CORE-SHELL NANOWIRES; NANOSTRUCTURES; NANORODS; GROWTH;
D O I：
10.1016/j.matlet.2012.12.048
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SnO2-core/Ga2O3-shell nanowires were synthesized by one-step thermal evaporation of a mixture of SnO2, GaN and graphite powders at 1000 degrees C. Transmission electron microscopy and energy-dispersive X-ray spectroscopy concentration profiles of Sn, Ga, and O across the diameter of the nanowire indicated clearly that the nanowire consisted of a single crystal SnO2 core and a single crystal Ga2O3 shell with a shell layer thickness of similar to 20 nm. A possible growth mechanism of SnO2-core/Ga2O3-shell nanowires in the one-step synthesis process is proposed. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：30 / 33
页数：4
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